Gunma, Japan

Syouji Miyahara

This inventor holds 1 USPTO granted patent. Top assignees: Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Syouji Miyahara. Retrieved from https://idiyas.com/inventor/syouji-miyahara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Syouji Miyahara: Innovator in Insulated Gate Semiconductor Technology

Introduction

Syouji Miyahara is a notable inventor based in Gunma, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and methods.

Latest Patents

Miyahara holds a patent for an "Insulated gate semiconductor device and method for manufacturing the same." This invention addresses the challenges associated with the well region of insulated gate semiconductor elements. The patent describes a method to form a p-type well region by stacking two p-type impurity regions, which helps maintain a uniform impurity concentration and reduces on-resistance in semiconductor devices.

Career Highlights

Throughout his career, Syouji Miyahara has worked with prominent companies such as Sanyo Electric Co., Ltd. and Sanyo Semiconductor Co., Ltd. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Miyahara has collaborated with various professionals in the field, including his coworker Daichi Suma. Their joint efforts have contributed to advancements in semiconductor design and manufacturing processes.

Conclusion

Syouji Miyahara's work in insulated gate semiconductor technology showcases his innovative spirit and dedication to improving electronic devices. His contributions continue to influence the semiconductor industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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