Troy, NY, United States of America

Swastik Kar

This inventor holds 1 USPTO granted patent. Top assignee: Rensselaer Polytechnic Institute. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Swastik Kar. Retrieved from https://idiyas.com/inventor/swastik-kar-to8rcqu4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Swastik Kar: Carbon Nanotube Growth Innovation

Introduction

Swastik Kar is an inventor associated with Rensselaer Polytechnic Institute in Troy, New York. His work includes a patented method for growing aligned carbon nanotubes directly on metallic surfaces.

Latest Patents

Kar’s listed patent, “Carbon Nanotube Growth on Metallic Substrate Using Vapor Phase Catalyst Delivery,” describes a chemical vapor deposition (CVD) method that uses a vapor-phase catalyst to grow aligned carbon nanotubes on metal surfaces. The approach can create structures with a robust junction between the nanotubes and metal, without first applying solid catalytic materials to the surface or relying on solder or adhesives in a multistep fabrication process. Kar has 1 patent listed in the information provided.

Career Highlights

Kar’s patent focuses on a fabrication technique that integrates carbon nanotubes with metallic substrates. This method may be useful in developing carbon-nanotube-containing structures where a strong connection between the nanotubes and metal is important.

Collaborations

Kar’s listed coworkers include Saikat Talapatra and Sunil Pal. His work is associated with Rensselaer Polytechnic Institute.

Conclusion

Swastik Kar’s patented CVD method offers an approach to growing aligned carbon nanotubes directly on metal, with the aim of forming a robust nanotube–metal junction while avoiding additional bonding materials and fabrication steps.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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