Moscow, Russia

Svetlana S Berman

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Svetlana S Berman. Retrieved from https://idiyas.com/inventor/svetlana-s-berman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 12.0

ph-index = 1


Company Filing History:

goldMedal1 out of 834,601 
Other
 patents

Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Svetlana S Berman: Innovator in Underground Formation Treatment

Introduction

Svetlana S Berman is a notable inventor based in Moscow, Russia. She has made significant contributions to the field of underground formation treatment. Her innovative methods have the potential to enhance the efficiency of drilling operations.

Latest Patents

Svetlana holds a patent for a method of treatment of drilled-in underground formations saturated with fluids. The method consists of measuring the formation pressure and feeding a solvent through a well into the formation. Subsequently, a hydrophilizing solution is introduced through the same well while maintaining the bottom hole pressure approximately equal to the formation pressure. This innovative approach aims to improve the treatment of underground formations.

Career Highlights

Throughout her career, Svetlana has demonstrated a commitment to advancing technology in her field. Her work has been recognized for its practical applications and effectiveness in addressing challenges faced in underground drilling.

Collaborations

Svetlana has collaborated with esteemed colleagues, including Teimur I Abdullaev and Vagif J Bakhishev. These partnerships have contributed to the development and refinement of her innovative methods.

Conclusion

Svetlana S Berman is a pioneering inventor whose work in underground formation treatment showcases her expertise and dedication to innovation. Her contributions continue to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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