Susumu Kenmochi

Title: Susumu Kenmochi: Innovator in Semiconductor Technology

Introduction

Susumu Kenmochi is a prominent inventor based in Tsuruoka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Kenmochi's latest patents focus on innovative semiconductor devices. One of his notable inventions includes a semiconductor device that features a semiconductor layer, a gate insulating layer, a gate electrode, a channel region, a source region, a drain region, a guard ring region, an offset insulating layer, a first interlayer dielectric, and a first shield layer. This first shield layer is electrically connected to the guard ring region and is strategically positioned outside both ends of the gate electrode in the channel width direction. Additionally, the device includes a second interlayer dielectric and a second shield layer, which is provided in specific regions relative to the gate electrode.

Career Highlights

Kenmochi is currently employed at Seiko Epson Corporation, where he continues to innovate in semiconductor technology. His work has garnered attention for its complexity and potential applications in various electronic devices.

Collaborations

Throughout his career, Kenmochi has collaborated with notable colleagues, including Masahiro Hayashi and Takahisa Akiba. These collaborations have contributed to the development of advanced semiconductor technologies.

Conclusion

Susumu Kenmochi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of modern electronic devices.