Company Filing History:
Years Active: 1989
Title: Sustana Sen: Innovator in Resonant Tunneling Transistors
Introduction
Sustana Sen is a prominent inventor based in Scotch Plains, NJ (US). She has made significant contributions to the field of electronics, particularly through her innovative work on resonant tunneling transistors. With a focus on enhancing the performance of electronic devices, her inventions have paved the way for advancements in semiconductor technology.
Latest Patents
Sustana Sen holds 1 patent for her invention of a resonant-tunneling, heterostructure bipolar transistor. This groundbreaking patent describes a quantum well situated between the emitter contact and collector region. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, featuring a double barrier in the base region. Additionally, the quantum well can be defined by the emitter and a potential barrier in the base region. Other embodiments include a quantum well positioned between the emitter and collector regions or within the emitter region itself.
Career Highlights
Sustana Sen has had a distinguished career at American Telephone & Telegraph Co., specifically at AT&T Bell Laboratories. Her work has been instrumental in advancing the understanding and application of resonant tunneling technology in modern electronics.
Collaborations
Throughout her career, Sustana has collaborated with notable colleagues, including Federico Capasso and Harry Tapley French. These partnerships have contributed to her innovative research and development efforts.
Conclusion
Sustana Sen's contributions to the field of electronics, particularly through her resonant tunneling transistor patent, highlight her role as a leading inventor. Her work continues to influence advancements in semiconductor technology and electronic devices.