The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1989
Filed:
Aug. 18, 1986
Federico Capasso, Westfield, NJ (US);
Harry T French, New York, NY (US);
Arthur C Gossard, Warren, NJ (US);
Albert L Hutchinson, Piscataway, NJ (US);
Richard A Kiehl, New York, NY (US);
Sustana Sen, Scotch Plains, NJ (US);
American Telephone and Telegraph Company AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. In another embodiment the quantum well is defined by the emitter and a potential barrier in the base region. Further embodiments have a quantum well between emitter and collector regions or else within the emitter region.