Susan Fullerton

Title: Susan Fullerton: Innovator in Memory Technology

Introduction

Susan Fullerton is a prominent inventor based in South Bend, Indiana. She has made significant contributions to the field of memory technology, particularly with her innovative work on single-transistor random access memory (RAM). Her research has the potential to revolutionize how data is stored and accessed in electronic devices.

Latest Patents

Susan Fullerton holds a patent for a groundbreaking invention titled "Single transistor random access memory using ion storage in two-dimensional crystals." This single-transistor RAM cell is designed to function as universal memory. The cell comprises a first gate, a two-dimensional crystal channel, a source, a drain, an ion conductor, and a second back gate. The technology allows for the drifting of ions towards the graphene channel, which induces charge carriers from the source into the channel. The conductivity of the graphene channel is influenced by the proximity of the ions, enabling the modification of the channel's conductivity to indicate the state of the memory. She has 1 patent to her name.

Career Highlights

Susan Fullerton is affiliated with the University of Notre Dame Du Lac, where she continues her research and development in memory technology. Her work has garnered attention for its innovative approach and potential applications in various electronic devices.

Collaborations

One of her notable collaborators is Alan C. Seabaugh, with whom she has worked closely on advancing memory technology.

Conclusion

Susan Fullerton's contributions to the field of memory technology highlight her role as an influential inventor. Her innovative patent on single-transistor RAM showcases her commitment to advancing electronic memory solutions.