Tsukuba, Japan

SungWoo Choi

This inventor holds 1 USPTO granted patent. Top assignee: National Institute of Advanced Industrial Science and Technology. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: SungWoo Choi. Retrieved from https://idiyas.com/inventor/sungwoo-choi-hkc0qcxe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of SungWoo Choi in Phototransistor Technology

Introduction

SungWoo Choi is a notable inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of phototransistors. His innovative work has led to the creation of a patented device that enhances the performance of phototransistors.

Latest Patents

SungWoo Choi holds a patent for a "Hetero-junction bipolar phototransistor with improved noise characteristic." This invention features a hetero-junction bipolar phototransistor that includes a photo-absorption layer formed of a first conductivity type semiconductor layer. The device also incorporates a collector operating as a barrier layer, a base layer, and an emitter layer, which are stacked in sequence on the photo-absorption layer. The design includes a first mesa structure formed by the photo-absorption layer, collector, base layer, and emitter layer, along with a second mesa structure created by the emitter contact layer. The photo-absorption layer is made of a semiconductor layer with a narrow gap that corresponds to the light-sensing wavelength of the phototransistor. The collector consists of a semiconductor layer with a wider gap than that of the photo-absorption layer. The base layer has an energy level equal to or higher than that of the collector, while the emitter layer has a wide gap compared to the base layer, with an energy level in the valence band that is lower than that of the base layer.

Career Highlights

SungWoo Choi is affiliated with the National Institute of Advanced Industrial Science and Technology, where he continues to advance research in semiconductor technologies. His work has been instrumental in improving the performance and reliability of phototransistors, which are critical components in various electronic devices.

Collaborations

Throughout his career, SungWoo Choi has collaborated with esteemed colleagues, including Mutsuo Ogura and Nobuyuki Hayama. These collaborations have further enriched his research and contributed to the advancement of technology in the field.

Conclusion

SungWoo Choi's innovative contributions to phototransistor technology exemplify the impact of dedicated research and development in the semiconductor industry. His patented inventions continue to influence advancements in electronic devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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