Hwasung, South Korea

Sunglae Choi

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sunglae Choi. Retrieved from https://idiyas.com/inventor/sunglae-choi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Sunglae Choi

Introduction

Sunglae Choi is a notable inventor based in Hwasung, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work is recognized within the technology sector, especially at Samsung Electronics Co., Ltd., where he applies his expertise.

Latest Patents

Sunglae Choi holds a patent for a "Method of forming variable resistance memory device." This patent describes a method that includes forming an opening in an insulating layer and filling that opening with an antimony-rich antimony-tellurium compound to create a variable resistance layer. This innovation is crucial for advancements in memory technology.

Career Highlights

Throughout his career, Sunglae Choi has focused on developing cutting-edge technologies that enhance memory devices. His work at Samsung Electronics Co., Ltd. has positioned him as a key player in the industry, contributing to the company's reputation for innovation.

Collaborations

Sunglae Choi has collaborated with talented coworkers, including Ik Soo Kim and Dong-Hyun Im. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Sunglae Choi's contributions to the field of memory devices exemplify the spirit of innovation. His patent and work at Samsung Electronics Co., Ltd. highlight his role in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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