Company Filing History:
Years Active: 1993-1994
Title: Innovations of Sungjae Maeng in GaAs Semiconductor Technology.
Introduction
Sungjae Maeng is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Arsenide (GaAs) devices. With a total of 2 patents to his name, his work has advanced the manufacturing methods of GaAs metal semiconductor field-effect transistors (FETs).
Latest Patents
Sungjae Maeng's latest patents include a manufacturing method of GaAs metal semiconductor FET. This method involves several steps, such as preparing a GaAs substrate, depositing a silicon layer, and forming photoresist patterns to define contact regions and channel regions. The process also includes injecting silicon ions into the GaAs substrate and forming ohmic contacts and gate electrodes. Another notable patent is the manufacturing method of a self-aligned GaAs FET using a refractory gate with a dual structure. This method enhances the gate's low-resistance and Schottky characteristics through a series of precise steps, including ion implantation and annealing.
Career Highlights
Sungjae Maeng is affiliated with the Electronics and Telecommunications Research Institute, where he continues to innovate in semiconductor technology. His work has been instrumental in improving the performance and efficiency of GaAs FETs, which are crucial for various electronic applications.
Collaborations
Some of his notable coworkers include Kyuhwan Shim and Chulsoon Park, who have collaborated with him on various projects related to semiconductor technology.
Conclusion
Sungjae Maeng's contributions to GaAs semiconductor technology through his innovative patents have significantly impacted the field. His work continues to inspire advancements in electronic devices and manufacturing processes.