Gyeonggi-do, South Korea

Sunghwan Cho

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sunghwan Cho. Retrieved from https://idiyas.com/inventor/sunghwan-cho-4wd8rvcs

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sunghwan Cho: Innovator in Electronic Device Technology

Introduction

Sunghwan Cho is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of electronic devices, particularly in the area of antenna technology. His innovative approach has led to the development of a unique patent that enhances the functionality of electronic devices.

Latest Patents

Sunghwan Cho holds a patent for an "Electronic device and method for controlling output power of antenna thereof." This invention includes a housing that contains an antenna, a grip sensor to detect external objects, and a processor that manages the output power of the antenna based on the sensor's readings. The device intelligently adjusts the antenna's output power depending on whether it is in use, optimizing performance and efficiency.

Career Highlights

Sunghwan Cho is currently employed at Samsung Electronics Ltd., a leading global technology company. His work at Samsung has allowed him to collaborate with other talented professionals in the field, contributing to the advancement of electronic device technology.

Collaborations

Some of his notable coworkers include Jangsun Yoo and Minseok Kim. Their combined expertise fosters a collaborative environment that drives innovation within the company.

Conclusion

Sunghwan Cho's contributions to electronic device technology exemplify the spirit of innovation. His patent reflects a commitment to enhancing user experience through advanced technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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