Suwon-si, Gyeonggi-do, South Korea

Sunghee Chung

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sunghee Chung. Retrieved from https://idiyas.com/inventor/sunghee-chung-ve5jj6i5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sunghee Chung

Introduction

Sunghee Chung is a notable inventor based in Suwon-si, Gyeonggi-do, South Korea. He has made significant contributions to the field of technology, particularly in memory devices. His work has led to the development of innovative solutions that enhance the performance and efficiency of electronic devices.

Latest Patents

Sunghee Chung holds a patent for "Vertical Memory Devices." This invention represents a breakthrough in memory technology, showcasing his expertise and commitment to advancing the field. He has been recognized for his innovative approach to solving complex problems in memory design.

Career Highlights

Chung is currently employed at Samsung Electronics Ltd., a leading global technology company. His role at Samsung has allowed him to work on cutting-edge projects that push the boundaries of what is possible in electronics. His contributions have been instrumental in maintaining Samsung's reputation as a leader in innovation.

Collaborations

Sunghee Chung has collaborated with talented coworkers, including Kyungeun Park and Solmi Kwak. Their teamwork has fostered an environment of creativity and innovation, leading to successful projects and advancements in technology.

Conclusion

Sunghee Chung's work exemplifies the spirit of innovation in the technology sector. His contributions to vertical memory devices and his role at Samsung Electronics Ltd. highlight his importance as an inventor. His ongoing efforts continue to shape the future of electronic memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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