Yongin, South Korea

Sunghan Kim

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Samsung Display Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sunghan Kim. Retrieved from https://idiyas.com/inventor/sunghan-kim-hfd9fdlr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sunghan Kim and Display Technology

Introduction

Sunghan Kim is an inventor based in Yongin, South Korea, associated with Samsung Display Co., Ltd. His patent work concerns display apparatus design and the structure of conductive layers.

Latest Patents

The supplied information lists one patent for Kim: “Display apparatus including conductive layer having through-pattern.” The invention describes a display apparatus with pixel electrodes on a substrate, an emission layer above each electrode, and a single-body opposite electrode. A thin first passivation layer sits on the opposite electrode, with a thickness smaller than the wavelength of visible light generated by the emission layer. A conductive layer is placed on the passivation layer and includes a through-pattern of a preset shape. This arrangement addresses the layered construction of a display apparatus.

Career Highlights

Kim is associated with Samsung Display Co., Ltd., a company focused on display technologies. The provided record credits him with 1 patent.

Collaborations

The supplied information identifies Younggu Kim and Duckjong Suh as Kim’s coworkers. Their names are included here as professional associations; the available details do not specify their roles in the patent.

Conclusion

Sunghan Kim’s listed patent reflects work on the structure of display apparatuses, particularly the relationship between passivation and patterned conductive layers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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