Sunggeun Do

Title: Innovations of Sunggeun Do in Memory Device Technology

Introduction

Sunggeun Do is a notable inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of memory device technology, holding 2 patents that showcase his innovative approach to improving memory devices.

Latest Patents

One of his latest patents is focused on word line driver circuits for memory devices and methods of operating the same. This invention includes a memory device that features a word line driver circuit designed to reduce gate stress on a transistor. It achieves this by utilizing a lower high voltage that varies with a command. The memory device comprises multiple memory blocks and provides either a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal. The invention allows for changing the level of the lower high voltage to a low, medium, or high voltage level based on the command. Additionally, the memory device applies the lower high voltage to the gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives the word lines of non-selected memory blocks among the plurality of memory blocks.

Career Highlights

Sunggeun Do is currently employed at Samsung Electronics Co., Ltd., where he continues to develop innovative solutions in memory technology. His work has contributed to advancements in the efficiency and performance of memory devices.

Collaborations

He has collaborated with notable coworkers such as Youngsik Kim and Gongheum Han, further enhancing the innovative environment at Samsung Electronics.

Conclusion

Sunggeun Do's contributions to memory device technology through his patents reflect his commitment to innovation and excellence in the field. His work continues to influence advancements in memory technology, showcasing the importance of inventive minds in driving progress.