This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Pohang University of Science and Technology Foundation, Unist (Ulsan National Institute of Science and Technology). Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Innovations of Sungchul Jung in Non-Volatile Memory Technology
Introduction
Sungchul Jung is a notable inventor based in Cheongju, South Korea. He has made significant contributions to the field of non-volatile memory devices. His innovative work has led to the development of a unique operating method that enhances the functionality of memory technology.
Latest Patents
Sungchul Jung holds a patent for a non-volatile memory device and its operating method. This invention includes a substrate with multiple word lines extending in a first direction. It features a plurality of ferroelectric patterns on the word lines, covered by a blocking insulating film. The device also comprises bit line pairs that extend in a second direction, intersecting the word lines and ferroelectric patterns. Notably, the channel pattern between the bit lines exhibits an ambipolar conduction characteristic. This innovative design aims to improve the efficiency and reliability of memory devices. He has 1 patent to his name.
Career Highlights
Sungchul Jung has worked at prestigious institutions such as the Ulsan National Institute of Science and Technology and the Pohang University of Science and Technology Foundation. His experience in these organizations has allowed him to collaborate with leading experts in the field of memory technology.
Collaborations
Some of his notable coworkers include Kibog Park and Seokhyeong Kang. Their collaborative efforts have contributed to advancements in memory device technology.
Conclusion
Sungchul Jung's innovative work in non-volatile memory technology showcases his expertise and dedication to advancing the field. His contributions are significant and continue to influence the development of memory devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile