This inventor holds 3 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2016.
Location History:
- Suwon, KR (2002)
- Yongin-si, KR (2016)
Company Filing History:
Years Active: 2002-2016
Title: Innovations of Sung-Kue Jo in Memory Systems
Introduction
Sung-Kue Jo is a notable inventor based in Yongin, South Korea. He has made significant contributions to the field of memory systems, holding a total of 3 patents. His work primarily focuses on enhancing the efficiency and reliability of memory devices.
Latest Patents
Sung-Kue Jo's latest patents include innovative methods for memory systems that provide wear-leveling by allocating memory blocks among groups. One of his patents describes a memory system that includes a flash memory device and a memory controller. The memory controller is designed to control the flash memory device based on erase event information and error checking and correction (ECC) event information of each memory block, ensuring a more uniform distribution of memory block usage. Another patent outlines a similar memory system and wear-leveling method, emphasizing the importance of managing erasures and error correction data to enhance performance.
Career Highlights
Sung-Kue Jo is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves developing advanced memory solutions that are crucial for modern electronic devices. His expertise in memory systems has positioned him as a key contributor to the company's innovative projects.
Collaborations
Sung-Kue Jo collaborates with fellow inventor Yong-Tae Yim, working together to push the boundaries of memory technology. Their combined efforts have led to advancements that benefit the industry as a whole.
Conclusion
Sung-Kue Jo's contributions to memory systems through his patents and work at Samsung Electronics Co., Ltd. highlight his importance in the field of technology. His innovative approaches to wear-leveling and memory management continue to influence the development of more efficient memory devices.
