Suwon-si, South Korea

Sung Hwan Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electro-Mechanics. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sung Hwan Lee. Retrieved from https://idiyas.com/inventor/sung-hwan-lee-ebxvxl4k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sung Hwan Lee: Inventor of a Multilayer Electronic Component

Introduction

Sung Hwan Lee is an inventor based in Suwon-si, South Korea, and works at Samsung Electro-Mechanics. His patent work concerns multilayer electronic components and the composition of their internal electrodes.

Latest Patents

Lee is associated with 1 patent: “Multilayer Electronic Component Including Internal Electrode Having Nickel and Indium.” The invention describes a component with dielectric layers and internal electrodes arranged alternately within a body, along with an external electrode. At least one internal electrode contains nickel and indium. The patent specifies indium concentration thresholds at points near the dielectric interface and at central points within the electrode, defining a distribution intended for the component’s electrode structure.

Career Highlights

Lee’s listed patent reflects work on materials and structural design for multilayer electronic components at Samsung Electro-Mechanics. The disclosed approach focuses on controlling the distribution of indium in nickel-containing internal electrodes.

Collaborations

Lee’s listed coworkers include Jun Oh Kim and No Jun Kwak. The patent information provided does not specify their individual contributions or roles in the invention.

Conclusion

Sung Hwan Lee’s patent highlights his work at Samsung Electro-Mechanics on multilayer electronic components, particularly the composition and indium distribution of their internal electrodes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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