Seoul, South Korea

Sung-han Cho

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sung-han Cho. Retrieved from https://idiyas.com/inventor/sung-han-cho-1g2dqr4e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2021

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Mind of Sung-han Cho

Introduction: Sung-han Cho is a prominent inventor based in Seoul, South Korea. He is known for his contributions to the field of semiconductor technology. His innovative work has led to the development of a unique three-dimensional semiconductor device.

Latest Patents: Sung-han Cho holds 1 patent for his invention of a three-dimensional semiconductor device. This device features a common source line that passes between a first channel structure and a second channel structure, as well as between a first dummy channel structure and a second dummy channel structure. The design ensures that the distances in a specific direction between the common source line and the channel structures are consistent, while the distances to the dummy channel structures differ.

Career Highlights: Sung-han Cho is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor design and functionality.

Collaborations: Throughout his career, Sung-han Cho has collaborated with notable colleagues, including Young-Jin Jung and Hyoung-ryeol In. These partnerships have contributed to the advancement of innovative technologies in the semiconductor industry.

Conclusion: Sung-han Cho's contributions to semiconductor technology exemplify the spirit of innovation. His work continues to influence the field and inspire future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…