Sung-Chung Hsieh

Title: Innovations of Sung-Chung Hsieh in Chemical Vapor Deposition

Introduction

Sung-Chung Hsieh is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of chemical vapor deposition, particularly in the development of processes that enhance the quality of interconnects in semiconductor manufacturing. His innovative approach has led to the creation of a patented method that addresses common challenges in the industry.

Latest Patents

Sung-Chung Hsieh holds a patent for the chemical vapor deposition of tungsten (W-CVD) process. This invention focuses on growing low-stress and void-free interconnects. The method involves a two-step W-CVD process conducted in two separate chambers. The first step fills tungsten metal completely in the contact hole, while the second step forms a tungsten layer for interconnect. By utilizing two different chambers, the process allows for precise adjustments in temperature and gas flow, significantly reducing stress and preventing voids in the contact holes.

Career Highlights

Sung-Chung Hsieh is associated with Mosel Vitelic Corporation, where he has applied his expertise in chemical vapor deposition. His work has been instrumental in advancing the technology used in semiconductor manufacturing. His innovative methods have contributed to the production of more reliable and efficient electronic components.

Collaborations

Sung-Chung Hsieh has collaborated with notable colleagues, including Wen-Yu Ho and Yung-Tsun Lo. These collaborations have fostered an environment of innovation and have led to further advancements in the field of chemical vapor deposition.

Conclusion

Sung-Chung Hsieh's contributions to the field of chemical vapor deposition have made a significant impact on semiconductor manufacturing. His patented methods for growing low-stress and void-free interconnects demonstrate his commitment to innovation and excellence in technology.