Sung Bae Kim

Title: Innovations of Sung Bae Kim in Current Level Extraction

Introduction

Sung Bae Kim is an accomplished inventor based in Pyeongtaek-si, Gyeonggi-do, South Korea. He has made significant contributions to the field of electrical engineering, particularly in methods related to interconnection structures. His innovative approach has led to the development of a unique patent that addresses critical issues in current level extraction.

Latest Patents

Sung Bae Kim holds a patent titled "Method of extracting a current level for relating to the cutoff of an interconnection." This patent discloses a current level extraction method designed to prevent cutoff in interconnection structures. The method involves starting a voltage sweep at a specific temperature, measuring the initial resistance of the interconnection structure, and calculating the measured resistance based on the input voltage. It also includes determining the resistance ratio and updating the current value accordingly. This innovative approach enhances the reliability of interconnection structures in various applications.

Career Highlights

Sung Bae Kim is currently employed at SK Hynix Inc., a leading semiconductor company. His work at SK Hynix has allowed him to apply his expertise in electrical engineering and contribute to advancements in semiconductor technology. His dedication to innovation has positioned him as a valuable asset to the company.

Collaborations

Throughout his career, Sung Bae Kim has collaborated with notable colleagues, including Chang Hwi Lee and Si Woo Lee. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Sung Bae Kim's contributions to the field of electrical engineering, particularly through his patent on current level extraction, demonstrate his commitment to innovation. His work at SK Hynix Inc. and collaborations with esteemed colleagues further highlight his impact on the industry.