Ichon, South Korea

Sun-Woong Na

This inventor holds 1 USPTO granted patent. Top assignee: Hynix Semiconductor Inc.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sun-Woong Na. Retrieved from https://idiyas.com/inventor/sun-woong-na

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2008

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Sun-Woong Na

Introduction

Sun-Woong Na is a prominent inventor based in Ichon, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for fabricating semiconductor devices.

Latest Patents

Sun-Woong Na holds 1 patent for his invention titled "Method for fabricating semiconductor device having capacitor." This method involves providing a substrate structure that includes a bit line and a capacitor formed apart from each other at different levels. The process includes forming multiple insulation layers and performing etch steps to expose the upper surfaces of both the bit line and the capacitor.

Career Highlights

Sun-Woong Na is currently employed at Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work focuses on advancing semiconductor fabrication techniques, which are crucial for the development of modern electronic devices.

Collaborations

Throughout his career, Sun-Woong Na has collaborated with notable colleagues, including Dong-Goo Choi and Sang-Do Lee. These collaborations have further enhanced his research and development efforts in semiconductor technology.

Conclusion

Sun-Woong Na's contributions to semiconductor fabrication represent a significant advancement in the field. His innovative methods continue to influence the industry and pave the way for future technological developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…