Sun Oo Kim

Title: Sun Oo Kim and Dual-Damascene Interconnect Innovation.

Introduction

Sun Oo Kim is an inventor associated with Hopewell Junction, New York. Her patent work addresses methods for forming dual-damascene interconnect structures in semiconductor devices, with a focus on using planarization layers that have different porosity characteristics. Kim’s listed patent portfolio includes 1 patent.

Latest Patents

Kim’s patent, “Methods of Forming Dual-Damascene Interconnect Structures on Semiconductor Substrates Using Multiple Planarization Layers Having Different Porosity Characteristics,” describes a process for creating interconnect structures within an integrated circuit.

The method forms an electrically insulating layer on a substrate and creates at least one via hole through part of that layer. The via is filled with a first insulating material, then covered with a second insulating material whose porosity is lower. After selectively etching back the second material, the process exposes part of the via fill and etches a trench in the insulating layer. The resulting structure supports dual-damascene interconnect formation.

Career Highlights

The supplied career information associates Kim with Samsung Electronics Co., Ltd. and Infineon Technologies AG. Her patent reflects work on semiconductor fabrication processes and the formation of integrated-circuit interconnects.

Collaborations

Kim’s listed coworkers include Seung-Man Choi and Kyoung-Woo Lee. The patent’s technical subject places their work in the broader field of semiconductor manufacturing and interconnect design.

Conclusion

Sun Oo Kim’s patent describes a layered, porosity-controlled approach to forming dual-damascene interconnect structures, contributing to methods for fabricating integrated circuits.