Icheon, South Korea

Sun Beom Lee

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Skhynix Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sun Beom Lee. Retrieved from https://idiyas.com/inventor/sun-beom-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations by Sun Beom Lee in Semiconductor Technology

Introduction

Sun Beom Lee is a notable inventor based in Icheon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Sun Beom Lee holds a patent for a semiconductor device featuring a shielding structure. This device includes a sensing voltage line positioned between a first circuit area and a second circuit area. It is designed to transfer a sensing voltage detected in the second circuit area to the first circuit area. Additionally, it incorporates a first internal voltage line that facilitates the transfer of an internal voltage generated by a voltage driver of the first circuit area. This internal voltage is derived from the sensing voltage provided through the sensing voltage line, effectively shielding the sensing voltage line.

Career Highlights

Sun Beom Lee is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His role at SK Hynix allows him to further explore and develop innovative technologies that contribute to the advancement of semiconductor devices.

Conclusion

Sun Beom Lee's contributions to semiconductor technology through his patent demonstrate his expertise and commitment to innovation. His work continues to influence the industry and pave the way for future advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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