Tokyo, Japan

Sumio Sano

USPTO Granted Patents = 1 


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sumio Sano

Introduction

Sumio Sano is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of semiconductor technology. His work has led to advancements that enhance the performance of electronic components.

Latest Patents

Sumio Sano holds a patent for a silicon carbide substrate, semiconductor device, wiring substrate, and silicon carbide manufacturing method. This innovative silicon carbide substrate exhibits a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz, making it effective for mounting and operating electronic components. The substrate is heated to temperatures of 2000°C or more to achieve this low-frequency loss. Additionally, the manufacturing process using Chemical Vapor Deposition (CVD) without nitrogen flow into the heater further reduces the high-frequency loss to the desired level.

Career Highlights

Throughout his career, Sumio Sano has worked with esteemed institutions such as Tohoku University and Mitsui Engineering and Shipbuilding Company Limited. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Some of his notable coworkers include Tadahiro Ohmi and Akinobu Teramoto. Their collaboration has contributed to the advancement of research and development in the field.

Conclusion

Sumio Sano's contributions to semiconductor technology through his innovative patents have made a significant impact on the industry. His work continues to influence the development of high-performance electronic components.

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