The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Apr. 16, 2009
Tadahiro Ohmi, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Sumio Sano, Tokyo, JP;
Fusao Fujita, Okayama, JP;
Tadahiro Ohmi, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Sumio Sano, Tokyo, JP;
Fusao Fujita, Okayama, JP;
National University Corporation Tohoku University, Miyagi, JP;
Mitsui Engineering & Shipbuilding Co., Ltd., Tokyo, JP;
Abstract
A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.