Suguru Oota

Title: Suguru Oota: Innovator in Vapor Phase Growth Method

Introduction

Suguru Oota is a notable inventor based in Toda, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative vapor phase growth method. This method is essential for the development of high-quality epitaxial layers on semiconductor substrates.

Latest Patents

Suguru Oota holds 1 patent for his vapor phase growth method. This patent provides a technique for growing an epitaxial layer consisting of a compound semiconductor, such as InAlAs, on a semiconductor substrate like Fe-doped InP. The method ensures superior reproducibility by measuring the resistivity of the semiconductor substrate at room temperature and controlling the substrate's set temperature accordingly.

Career Highlights

Oota is associated with Nippon Mining & Metals Co., Ltd., where he has been able to apply his expertise in semiconductor growth techniques. His work has contributed to advancements in the production of compound semiconductors, which are crucial for various electronic applications.

Collaborations

Suguru Oota has collaborated with notable colleagues, including Masashi Nakamura and Ryuichi Hirano. Their combined efforts have furthered research and development in the semiconductor industry.

Conclusion

Suguru Oota's innovative work in vapor phase growth methods exemplifies the importance of advancements in semiconductor technology. His contributions continue to influence the field and pave the way for future innovations.