Su-Wen Chang

Title: Su-Wen Chang: Innovator in Trench DMOS Technology

Introduction

Su-Wen Chang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of trench DMOS devices. With a total of 3 patents to his name, Chang's work focuses on enhancing the efficiency and reliability of electronic components.

Latest Patents

One of Su-Wen Chang's latest patents is titled "Termination structure for trench DMOS device and method of making the same." This invention addresses the issue of current leakage that can occur due to electric field crowding at the border of the active area in trench DMOS devices. The patent describes a termination structure that includes a substrate of a first type conductivity and an epitaxial layer with a lower doping concentration. Additionally, it features a body region of a second type conductivity, a trench extending through the body region, and a gate oxide layer that lines the trench. The design aims to improve the performance and longevity of trench DMOS devices.

Career Highlights

Su-Wen Chang is currently employed at Mosel Vitelic Corporation, where he continues to innovate in the semiconductor industry. His expertise in trench DMOS technology has positioned him as a key player in the development of advanced electronic components.

Collaborations

Chang has collaborated with several talented individuals in his field, including Mao-Song Tseng and Hsin-Huang Hsieh. These collaborations have contributed to the advancement of technology in their respective areas of expertise.

Conclusion

Su-Wen Chang's contributions to trench DMOS technology exemplify the impact of innovative thinking in the semiconductor industry. His patents reflect a commitment to improving electronic device performance and reliability.