Suwon, South Korea

Su Seong Noh

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Su Seong Noh. Retrieved from https://idiyas.com/inventor/su-seong-noh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Su Seong Noh and Semiconductor Memory Innovation.

Introduction

Su Seong Noh is an inventor associated with Suwon, South Korea, and Samsung Electronics Co., Ltd. The supplied information identifies 1 patent associated with Noh.

Latest Patents

Noh is named on the patent “Semiconductor Memory Device and Electronic System Including the Same.” It describes a semiconductor memory device with a substrate and a mold structure made of alternating gate electrodes and insulating films. A channel structure passes through the mold structure and includes a semiconductor pattern and a ferroelectric film. The patent also describes a channel pad and a bit line contact, with specified relationships among the ferroelectric film, gate electrodes, and differently sized portions of the channel pad.

Career Highlights

The available information connects Noh’s patent work with Samsung Electronics Co., Ltd. The patent focuses on semiconductor memory device structure and its integration into an electronic system.

Collaborations

Il Ho Myeong and Seung Min Lee are identified as Noh’s coworkers. The supplied information does not specify their roles in the patent or describe particular collaborative contributions.

Conclusion

Su Seong Noh’s listed patent concerns structural features of a semiconductor memory device and an electronic system that includes it, reflecting work associated with Samsung Electronics in Suwon, South Korea.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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