Stuart Jc Irvine

Title: Innovations of Stuart Jc Irvine in Semiconductor Materials

Introduction

Stuart Jc Irvine is a notable inventor based in Hope, GB, recognized for his contributions to the field of semiconductor materials. He holds 2 patents that focus on advancements in chemical vapor deposition techniques. His work has significant implications for the development of II/VI and III/V semiconductor materials.

Latest Patents

Irvine's latest patents include innovative methods for the chemical vapor deposition of II/VI semiconductor materials. One of his patents details the use of Triisopropylindium as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly effective for indium doping at low carrier concentrations, specifically in the range of low 10¹⁵ cm^-3, and it does not exhibit an appreciable memory effect. Another patent focuses on the synthesis of triisopropylindium diisopropyltelluride adduct, which serves as a universal n-type dopant for both II/VI and III/V semiconductor materials. This adduct is particularly suited for indium doping at low carrier concentrations down to 10¹⁴ cm^-3 and also avoids significant memory effects.

Career Highlights

Stuart Jc Irvine is currently associated with the United States Navy, where he contributes his expertise in semiconductor technology. His work has been instrumental in advancing the understanding and application of n-type dopants in semiconductor materials.

Collaborations

Irvine has collaborated with notable colleagues such as Robert W Gedridge, Jr. and Ralph Korenstein, enhancing the impact of his research through teamwork and shared expertise.

Conclusion

Stuart Jc Irvine's innovative work in semiconductor materials, particularly through his patented methods, showcases his significant contributions to the field. His advancements in n-type doping techniques are paving the way for future developments in semiconductor technology.