The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1999
Filed:
May. 18, 1994
Applicant:
Inventors:
Kelvin T Higa, Ridgecrest, CA (US);
Robert W Gedridge, Jr, Ridgecrest, CA (US);
Ralph Korenstein, Framingham, MA (US);
Stuart JC Irvine, Hope, GB;
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
B32B / ; C23C / ;
U.S. Cl.
CPC ...
428689 ; 4272551 ; 4272552 ; 427255 ; 148D / ;
Abstract
Triisopropylindium ((CH.sub.3).sub.2 CH).sub.3 In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 10.sup.15 cm.sup.-3 and does not exhibit an appreciable memory effect.
Higa, Kelvin. (1999). Chemical vapor deposition of ii/vi semiconductor material using (U.S. Patent No. 5882805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5882805
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile