Hawthorne, CA, United States of America

Stuart C Billette


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Inventor Spotlight: Stuart C Billette

Introduction

Stuart C Billette, based in Hawthorne, California, has made noteworthy contributions to the field of semiconductor technology. With a keen focus on improving silicon chip metallization, Billette holds a patent that showcases his innovative approach to enhancing chip attachment processes.

Latest Patents

Stuart C Billette's patent, titled "Silicon Chip Metallization System," represents a significant advancement in attaching silicon chips to substrates. The patent describes an improved methodology that includes a layer of titanium placed between the silicon chip backside and the conventional layers of chrome and gold utilized for backside metallization. This innovation effectively reduces silicon dioxide formation during chip attachment procedures conducted in non-vacuum environments, thereby enhancing the reliability and performance of the silicon chips.

Career Highlights

Billette has spent a portion of his career at Hughes Aircraft Company, where he has contributed his expertise in semiconductor technology. His work not only focuses on innovative solutions but also on practical applications that push the boundaries of current technologies.

Collaborations

Throughout his tenure, Stuart has collaborated closely with his coworker, Joseph J Bendik. Their joint efforts reflect a commitment to advancing technology in the aerospace and defense sectors, proving the importance of teamwork in driving innovation.

Conclusion

Stuart C Billette continues to be a pivotal figure in the landscape of semiconductor inventions. His patented silicon chip metallization system demonstrates not only his inventive spirit but also the crucial role of innovation in modern technology. His contributions serve as an inspiration for future inventors in the field.

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