This inventor holds 1 USPTO granted patent. Top assignee: Mosel Vitelic Corporation. Active years: 1999.
Company Filing History:
Years Active: 1999
Title: Stewart Huang: Innovator in DRAM Technology
Introduction
Stewart Huang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of DRAM cells. His innovative approach has led to advancements that enhance the performance and efficiency of memory devices.
Latest Patents
Stewart Huang holds a patent for a DRAM cell with a roughened poly-Si electrode. This invention involves creating a porous silicon layer through wet etching of a polysilicon layer. In the preferred embodiment, the polysilicon layer is treated with an H₃PO₄ solution at temperatures ranging from 60 to 165 degrees Celsius for approximately 3 to 200 minutes. Following this, the porous silicon layer undergoes treatment with an SC-1 solution at temperatures between 50 to 100 degrees Celsius for about 5 to 30 minutes, resulting in a roughened polysilicon layer. The SC-1 solution consists of NH₄OH, H₂O₂, and H₂O, with a specific volume ratio of these compounds. The process continues with the deposition of a dielectric film along the roughened surface of the micro-islands polysilicon layers, followed by the deposition of a conductive layer. Finally, photolithography and etching processes are employed to shape the conductive layer, dielectric film, and micro-islands polysilicon layer.
Career Highlights
Stewart Huang is associated with Mosel Vitelic Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the company's reputation as a leader in the memory chip industry.
Collaborations
Stewart has collaborated with notable colleagues, including Han-Wen Liu and Roger Yen, who have worked alongside him in various projects related to semiconductor innovations.
Conclusion
Stewart Huang's contributions to DRAM technology exemplify the impact of innovative thinking in the semiconductor industry. His patent for a roughened poly-Si electrode showcases his commitment to enhancing memory device performance.