Houston, TX, United States of America

Steven V Krentz

This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Steven V Krentz. Retrieved from https://idiyas.com/inventor/steven-v-krentz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 1994

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Steven V Krentz

Introduction

Steven V Krentz is an accomplished inventor based in Houston, TX. He is known for his significant contributions to the field of integrated-circuit memory technology. His work has led to advancements that enhance the reliability and efficiency of memory cell detection.

Latest Patents

Krentz holds a patent for a "Circuit and method for sensing depletion of memory cells." This invention provides a rapid and reliable method for detecting depleted or nearly-depleted memory cells within a nonvolatile, integrated-circuit memory. The circuit is designed to improve the performance of memory systems by ensuring accurate detection of memory cell status.

Career Highlights

Steven V Krentz is associated with Texas Instruments Corporation, a leading company in semiconductor design and manufacturing. His role at Texas Instruments has allowed him to work on cutting-edge technologies that impact various electronic devices. He has made notable contributions to the development of memory circuits that are essential for modern computing.

Collaborations

Krentz has collaborated with David A Tatman, a fellow innovator at Texas Instruments. Their partnership has fostered the development of advanced technologies in the field of memory systems.

Conclusion

Steven V Krentz's innovative work in memory cell detection exemplifies the importance of advancements in integrated-circuit technology. His contributions continue to influence the efficiency and reliability of electronic devices today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…