This inventor holds 1 USPTO granted patent. Top assignee: Wafertech, Inc.. Active years: 2000.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2000
Title: The Innovative Contributions of Steve H. Yang
Introduction
Steve H. Yang is a notable inventor based in Vancouver, WA (US). He has made significant contributions to the field of chemical vapor deposition technology. His innovative methods have paved the way for advancements in semiconductor manufacturing.
Latest Patents
Yang holds a patent for a "Method for depositing high density plasma chemical vapor deposition." This method involves forming a high-density plasma chemical vapor deposition (HDPCVD) oxide layer over metal lines, which have gaps with an aspect ratio of two or more. The process includes the formation of a liner oxide layer over the metal lines, followed by the deposition of the HDPCVD oxide layer. Notably, the deposition-to-sputter ratio increases as the gaps are filled, enhancing the efficiency of the process.
Career Highlights
Steve H. Yang is currently employed at WaferTech, Inc., where he continues to innovate in the semiconductor industry. His work has been instrumental in improving the quality and reliability of semiconductor devices.
Collaborations
Yang has collaborated with talented individuals such as Jessie C. Shan and Chang-Kuei Huang. These partnerships have contributed to the successful development of advanced technologies in his field.
Conclusion
Steve H. Yang's contributions to the field of chemical vapor deposition are noteworthy. His innovative methods and collaborations have significantly impacted the semiconductor industry. His work continues to inspire advancements in technology and manufacturing processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
