Midland, MI, United States of America

Steve D Jons

This inventor holds 1 USPTO granted patent. Top assignee: University of Washington. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Steve D Jons. Retrieved from https://idiyas.com/inventor/steve-d-jons

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Steve D Jons: Innovator in Microchannel Technology

Introduction

Steve D Jons is a notable inventor based in Midland, MI (US). He has made significant contributions to the field of microfabrication, particularly through his innovative patent related to covered microchannels. His work has implications for various applications in engineering and technology.

Latest Patents

Steve D Jons holds a patent for a covered microchannel, which includes a substrate, an etched material adhered to the substrate, and a silicon-carbon material that forms the covered microchannel. The silicon-carbon material comprises SiO.sub.1.8-2.4 C.sub.0.3-1.0 and H.sub.0.7-4.0, containing at least one of several functional groups. This invention represents a significant advancement in microchannel technology.

Career Highlights

Steve D Jons is affiliated with the University of Washington, where he continues to engage in research and development. His work in microfabrication has garnered attention for its innovative approach and potential applications in various fields.

Collaborations

Some of his notable coworkers include Paul J O'Connor and Ing-Fen Hu. Their collaborative efforts contribute to the advancement of research in microchannel technology.

Conclusion

Steve D Jons is a prominent figure in the field of microfabrication, with a patent that showcases his innovative approach to covered microchannels. His contributions continue to influence the landscape of engineering and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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