Salles, France

Stephanie Thollon

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Inventor Spotlight: Stephanie Thollon

Introduction: Stephanie Thollon is a notable inventor from Salles, France, known for her innovative contributions to the field of chemical vapor deposition. With one patent to her name, her work has the potential to significantly impact the way porous materials are treated and utilized.

Latest Patents: Stephanie Thollon's prominent patent is titled "Method and Device for the Infiltration of a Structure of a Porous Material by Chemical Vapour Deposition." This groundbreaking method involves exposing a first face of a porous material structure to a gaseous flow while keeping the second face at least partially free from contact. This technique enhances the infiltration process, paving the way for advancements in material science.

Career Highlights: Stephanie is currently employed at Commissariat à l'Énergie Atomique, a government-funded research organization in France renowned for its work in energy and defense technologies. Her role allows her to focus on innovative research, contributing to advancements in various technologies.

Collaborations: During her career, Stephanie has collaborated with esteemed colleagues such as Sebastien Donet and Fabrice Emieux. These partnerships have fostered a collaborative environment that is essential for driving innovation and enhancing research outcomes.

Conclusion: Stephanie Thollon continues to be an influential figure in her field with her dedication to advancing the understanding and application of chemical vapor deposition in porous materials. Her contributions and collaborations reflect her commitment to innovation, positioning her as a significant inventor in the realm of material science.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…