Stephane Thioliere

Title: The Innovative Contributions of Stephane Thioliere

Introduction

Stephane Thioliere is a notable inventor based in Paris, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for enhancing the performance of DRAM chips. His innovative approach has led to the filing of a patent that showcases his expertise and creativity in this specialized area.

Latest Patents

Thioliere holds a patent for a "Method of forming first level of metallization in DRAM chips." This patent describes a detailed process for forming contacts and metal lands onto a semiconductor structure at the first level of metallization. The method involves using a silicon substrate with diffusion regions and gate conductor stacks, which are passivated by an insulating layer. The process includes etching contact holes, filling them with doped polysilicon, and creating recesses for metal lands, ultimately leading to a coplanar surface with the insulating material.

Career Highlights

Stephane Thioliere is associated with International Business Machines Corporation (IBM), where he has been able to apply his innovative ideas in a collaborative environment. His work has contributed to advancements in semiconductor manufacturing processes, which are crucial for the performance of modern electronic devices.

Collaborations

Throughout his career, Thioliere has worked alongside talented colleagues such as Christophe Girard and Renzo Maccagnan. These collaborations have fostered an environment of innovation and have led to the successful development of new technologies in the semiconductor industry.

Conclusion

Stephane Thioliere's contributions to the field of semiconductor technology exemplify the impact of innovative thinking in advancing electronic manufacturing processes. His patent and collaborative efforts highlight the importance of teamwork and creativity in driving technological progress.