Heverlee, Belgium

Stephane Lariviere

This inventor holds 1 USPTO granted patent. Top assignee: Imec Vzw. Active years: 2018.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Innovations by Stephane Lariviere in Conductive Path Formation

Introduction

Stephane Lariviere is an accomplished inventor based in Heverlee, Belgium. He has made significant contributions to the field of conductive path formation, showcasing his expertise through his innovative patent.

Latest Patents

Lariviere holds a patent titled "Methods for forming conductive paths and vias." This patent discloses a method for forming conductive paths and vias by transferring patterns of a hard mask layer into a dielectric layer through etching. The process involves creating trenches that define locations for conductive paths in an upper metallization level. Notably, at least one trench is interrupted by a block portion of the hard mask layer, which defines the tip-to-tip location of a pair of conductive paths. The trenches extend partially through the dielectric layer, allowing for the deepening of holes that are filled with conductive material after the hard mask layer is removed.

Career Highlights

Lariviere's work at Imec Vzw has positioned him as a key figure in the development of advanced semiconductor technologies. His innovative methods have the potential to enhance the efficiency and performance of electronic devices.

Collaborations

Throughout his career, Lariviere has collaborated with talented individuals such as Youssef Drissi and Ryan Ryoung Han Kim. These collaborations have further enriched his research and development efforts.

Conclusion

Stephane Lariviere's contributions to the field of conductive path formation exemplify his innovative spirit and dedication to advancing technology. His patent reflects a significant step forward in semiconductor manufacturing processes.

Profile summary based on public USPTO records.
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