This inventor holds 1 USPTO granted patent. Top assignee: Spire Corporation. Active years: 1984.
Company Filing History:
Years Active: 1984
Title: The Innovative Contributions of Stanley J Solomon
Introduction
Stanley J Solomon is a notable inventor based in Lexington, MA (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to plasma ion deposition processes. His work has implications for the development of thin semiconductor films, which are essential in various electronic applications.
Latest Patents
Stanley J Solomon holds a patent for a plasma ion deposition process. This process involves the ionization of a semiconductor-based gaseous compound within a chamber using an electron-supported large volume, low pressure, high temperature plasma. The semiconductor ions extracted from the gaseous compound are deposited onto low-cost amorphous substrates. The deposition occurs initially at a slow rate, followed by a higher rate, allowing the deposited ions to coalesce into lattice clusters. These clusters grow into a large-grain, thin semiconductor film on the substrate. The gaseous compound used preferably includes silane gas along with dopant atom source gases. He has 1 patent to his name.
Career Highlights
Stanley J Solomon has been associated with Spire Corporation, where he has contributed to advancements in semiconductor technology. His work has been pivotal in enhancing the efficiency and cost-effectiveness of semiconductor film production.
Collaborations
Some of his notable coworkers include Roger G Little and Robert G Wolfson. Their collaborative efforts have furthered the research and development in the field of semiconductor technologies.
Conclusion
Stanley J Solomon's innovative work in plasma ion deposition processes has made a significant impact on the semiconductor industry. His contributions continue to influence advancements in technology and materials science.