Sreeram Appasamy

Title: Sreeram Appasamy: Innovator in Patterning Technology

Introduction

Sreeram Appasamy is a notable inventor based in North White Plains, NY (US). He has made significant contributions to the field of microelectronics through his innovative patent. His work focuses on developing advanced patterning methods that enhance the efficiency and cost-effectiveness of microelectronic device fabrication.

Latest Patents

Sreeram Appasamy holds a patent for a "High throughput, low cost dual-mode patterning method for large area substrates." This patent presents a high-throughput, low-cost patterning platform that serves as an alternative to traditional photolithography and direct laser ablation techniques. The methods outlined in the patent are designed for creating microsized and nanosized structures with precise physical dimensions and spatial orientation. These structures are essential components in various microelectronic devices. The processing techniques are compatible with large area substrates, making them suitable for semiconductor integrated circuits, displays, and microelectronic device arrays. Additionally, the methods are beneficial for applications requiring the patterning of layered materials, such as thin film layers in electronic devices.

Career Highlights

Throughout his career, Sreeram Appasamy has worked with esteemed organizations, including the University of Illinois and Anvik Corporation. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking advancements in the field of microelectronics.

Collaborations

Sreeram has collaborated with notable professionals in his field, including Kanti Jain and Junghun Chae. These collaborations have further enriched his work and expanded the impact of his innovations.

Conclusion

Sreeram Appasamy is a distinguished inventor whose contributions to patterning technology have the potential to revolutionize the microelectronics industry. His innovative approaches and dedication to advancing fabrication methods continue to inspire future developments in the field.