Location History:
- Himeji, JP (2018)
- Himeji Hyogo, JP (2021 - 2023)
Company Filing History:
Years Active: 2018-2023
Title: Souzou Kanie: Innovator in Semiconductor Technology
Introduction
Souzou Kanie is a notable inventor based in Himeji, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.
Latest Patents
Kanie's latest patents include innovative designs for semiconductor devices. One of his patents describes a semiconductor device that features a silicon carbide layer, which includes an element region and a termination region surrounding it. The termination region is characterized by first straight-line portions extending in one direction, second straight-line portions extending in another direction, and corner portions connecting the two. This design incorporates a second-conductivity-type silicon carbide region with a dot-line shape, where the occupation ratio of the dot portions is larger in the corner areas compared to the straight-line portions. Another patent presents a similar semiconductor device, emphasizing the unique structural characteristics that enhance performance.
Career Highlights
Throughout his career, Souzou Kanie has worked with prominent companies in the technology sector. He has been associated with Toshiba Corporation and Toshiba Electronic Devices & Storage Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Kanie has collaborated with several talented individuals in his field, including Hiroshi Kono and Teruyuki Ohashi. These collaborations have contributed to the advancement of semiconductor technologies and have fostered a creative environment for innovation.
Conclusion
Souzou Kanie is a distinguished inventor whose work in semiconductor technology has led to multiple patents and significant advancements in the field. His contributions continue to influence the development of efficient semiconductor devices.