logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10074539 B1

PDFFull Text
Date of Patent:
Sep. 11, 2018

Filed:

Jan. 23, 2018

Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Teruyuki Ohashi, Kawasaki, JP;

Hiroshi Kono, Himeji, JP;

Souzou Kanie, Himeji, JP;

Tatsuo Shimizu, Shinagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Earl Taylor

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/04 (2006.01); H01L 29/167 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/047 (2013.01); H01L 29/0646 (2013.01); H01L 29/0865 (2013.01); H01L 29/0869 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/41741 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); H01L 29/41766 (2013.01); H01L 29/41775 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a SiC layer having a first and a second plane; a first electrode having a first region in the SiC layer, the inclination angle of a side surface of the first region being 60 to 85 degrees; a second electrode; a first gate electrode; a second gate electrode facing the first gate electrode; first and second gate insulating layers; a first region of a first conductivity type in the SiC layer; a second region of a second conductivity type between the first region and the first gate insulating layer; a third region of the second conductivity type between the first region and the second gate insulating layer; a sixth region of the second conductivity type between the first region and the first region; and a seventh region of the second conductivity type between the first region and the sixth region.

Find Patent Forward Citations

Loading…