Oyama, Japan

Souta Matsumoto


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Innovations by Souta Matsumoto in Semiconductor Technology

Introduction

Souta Matsumoto is a notable inventor based in Oyama, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs that enhance the performance of semiconductor devices.

Latest Patents

Matsumoto holds a patent for a semiconductor device that features a polarization super junction field effect transistor. This invention addresses the tradeoff between high voltage resistance and high speed in semiconductor devices. The patent describes a semiconductor device that includes a polarization super junction region and a p-electrode contact region. The design allows for high voltage resistance while minimizing current collapse and maintaining low loss during operation.

Career Highlights

Matsumoto's work has been instrumental in advancing semiconductor technology. His patent demonstrates a deep understanding of the complexities involved in semiconductor design, particularly with materials like GaN and AlGaN. He is currently associated with Powdec K.K., where he continues to innovate in the field.

Collaborations

Matsumoto has collaborated with notable colleagues such as Shoko Echigoya and Fumihiko Nakamura. Their combined expertise contributes to the development of cutting-edge semiconductor technologies.

Conclusion

Souta Matsumoto's contributions to semiconductor technology through his innovative patent highlight his role as a leading inventor in the field. His work not only addresses critical challenges in semiconductor design but also paves the way for future advancements.

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