Tokyo, Japan

Sousuke Oosawa

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Innovations of Sousuke Oosawa in Resist Pattern-Forming Methods

Introduction

Sousuke Oosawa is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of lithography, particularly in the development of resist pattern-forming methods. His innovative approach has implications for various applications in semiconductor manufacturing.

Latest Patents

Sousuke Oosawa holds a patent for a resist pattern-forming method. This method involves applying a photoresist composition directly or indirectly on the front face of a substrate to form a photoresist film. A topcoat layer is then laminated on the front face of the photoresist film. The photoresist film undergoes liquid immersion lithography in the presence of a liquid immersion liquid on the front face of the topcoat layer. After this process, part of the topcoat layer is removed, and the photoresist film is developed. This innovative method enhances the efficiency and precision of pattern formation in lithography.

Career Highlights

Sousuke Oosawa is currently employed at JSR Corporation, where he continues to advance his research and development efforts. His work at JSR Corporation has positioned him as a key player in the field of semiconductor technology. With a focus on improving lithographic techniques, he has contributed to the company's reputation for innovation.

Collaborations

Some of Sousuke Oosawa's coworkers include Tomohiko Sakurai and Hiromitsu Nakashima. Their collaborative efforts in research and development have fostered a productive environment for innovation at JSR Corporation.

Conclusion

Sousuke Oosawa's contributions to resist pattern-forming methods exemplify the importance of innovation in the semiconductor industry. His patent and ongoing work at JSR Corporation highlight his role as a significant inventor in this field.

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