Bures-sur-Yvette, France

Sophie Crouzy


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2001

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2 patents (USPTO):Explore Patents

Title: The Innovations of Sophie Crouzy

Introduction

Sophie Crouzy is a notable inventor based in Bures-sur-Yvette, France. She has made significant contributions to the field of electrical engineering, particularly in the development of technologies related to insulated-gate bipolar transistors (IGBTs). With a total of 2 patents, her work has garnered attention in the industry.

Latest Patents

Crouzy's latest patents include a method of electrically connecting IGBT transistor chips mounted on an integrated-circuit wafer. This innovative method involves welding the collector, emitter, and gate-control electrodes to corresponding connection locations of the chips. Notably, some of the emitter electrodes are designed as a single piece in the form of a plate made of electrically conducting material, featuring protruding parts that define connection pads for welding.

Another significant patent is her method of fabricating a gate-control electrode for an IGBT transistor. This method utilizes a plate of electrically conducting material covered with an electrically insulating layer. It includes forming an electrically conductive layer on the connection pad and creating a supply track for the pad, which is then buried for enhanced functionality.

Career Highlights

Sophie Crouzy is currently employed at Alstom Holdings, where she continues to innovate and contribute to advancements in electrical engineering. Her expertise in IGBT technology has positioned her as a key player in her field.

Collaborations

Throughout her career, Crouzy has collaborated with notable colleagues, including Nicolas Changey and Alain Petitbon. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Sophie Crouzy's contributions to the field of electrical engineering, particularly through her patents related to IGBT technology, highlight her role as a leading inventor. Her work not only advances technology but also inspires future innovations in the industry.

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