The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2001
Filed:
Oct. 29, 1999
Applicant:
Inventors:
Nicolas Changey, rue de Navarre, FR;
Alain Petitbon, rue des Menuets, FR;
Sophie Crouzy, Bures-sur-Yvette, FR;
Eric Ranchy, Villejuif, FR;
Assignee:
Alstom Holdings, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1331 ; H01L 2/1336 ;
Abstract
This method of fabricating a gate-control electrode (,) for an insulated-gate bipolar transistor, from a plate of electrically conducting material which is covered with an electrically insulating layer (,) and, on one of its large faces, delimits a connection pad intended to be soldered to the gate, includes the steps consisting in, on the pad, forming an electrically conductive layer (,) covering the electrically insulating layer (,), on the plate, forming an electrically conductive track for supplying the connection pad, and burying the supply track.