Mie, Japan

Sonoe Matsushita


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Sonoe Matsushita: Innovator in Semiconductor Technology

Introduction

Sonoe Matsushita is a prominent inventor based in Mie, Japan. She has made significant contributions to the field of semiconductor technology, particularly through her innovative designs and methods. Her work has been recognized in the industry, showcasing her expertise and dedication to advancing technology.

Latest Patents

Matsushita holds a patent for a semiconductor storage device and a method for manufacturing such a device. This invention includes a cell array region with multiple memory cells and an outer edge portion that surrounds the cell array region. The design features a stacked body with conductive layers arranged in a stair shape, enhancing the functionality of the semiconductor storage device. This innovative approach is aimed at improving the efficiency and performance of semiconductor storage solutions. She has 1 patent to her name.

Career Highlights

Throughout her career, Sonoe Matsushita has been associated with Toshiba Memory Corporation, where she has played a vital role in developing cutting-edge semiconductor technologies. Her work has contributed to the advancement of memory storage solutions, making a lasting impact on the industry.

Collaborations

Matsushita has collaborated with notable colleagues, including Takahito Nishimura and Kazuyuki Yoshimochi. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.

Conclusion

Sonoe Matsushita is a trailblazer in semiconductor technology, with her innovative patent and contributions to Toshiba Memory Corporation. Her work continues to influence the industry, paving the way for future advancements in semiconductor storage solutions.

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