Somasundaram Ashok is a notable inventor based in University Park, PA (US). He has made significant contributions to the field of microelectronics, holding a total of 3 patents. His work focuses on advanced microelectronic devices that enhance performance and efficiency.

Latest Patents

One of his latest patents is titled "Accumulation field effect microelectronic device and process for the formation thereof." This invention describes a gated microelectronic device that includes a source with an ohmic contact characterized by a specific dopant type and concentration. The device also features a drain with a similar configuration and an intermediate channel portion defined by its own dopant characteristics. An insulative dielectric is in contact with the channel portion, which is overlaid by a gate. The gate contact applies a voltage bias to control charge carrier accumulation and depletion in the channel. Notably, the channel portion is fully depleted in the off-state, and the dopant type remains consistent across the source, drain, and channel. The on-state current of the device is determined by the doping, which differs from traditional MOSFETs, as it is not directly proportional to device capacitance.

Career Highlights

Somasundaram Ashok has worked with esteemed organizations such as the Penn State Research Foundation and Penn State University. His experience in these institutions has allowed him to develop and refine his innovative ideas in microelectronics.

Collaborations

He has collaborated with notable colleagues, including Stephen J Fonash and Yinghui Shan, contributing to advancements in their respective fields.

Conclusion

Somasundaram Ashok's work in microelectronics exemplifies the spirit of innovation and dedication to advancing technology. His patents reflect a deep understanding of microelectronic devices and their potential applications.