Sokrates T Pantelides

Title: Sokrates T Pantelides: Innovator in Silicon Carbide Semiconductor Technology

Introduction

Sokrates T Pantelides is a notable inventor based in Franklin, TN (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon carbide devices. His innovative approach has led to advancements that enhance the performance and reliability of these devices.

Latest Patents

Sokrates holds a patent for the "Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects." This patent describes a method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes forming a layer of silicon dioxide on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface. Nitrogen is then incorporated at this interface to reduce the interface trap density. The silicon carbide substrate, in one embodiment, includes an n-type 4H-silicon carbide. This innovation is crucial for improving the efficiency and effectiveness of silicon carbide devices.

Career Highlights

Throughout his career, Sokrates has worked with prestigious institutions such as Vanderbilt University and Auburn University. His experience in these academic environments has allowed him to collaborate with other experts in the field and contribute to groundbreaking research.

Collaborations

Sokrates has collaborated with notable colleagues, including Gilyong Y Chung and Chin Che Tin. These partnerships have fostered a rich exchange of ideas and have been instrumental in advancing semiconductor technology.

Conclusion

Sokrates T Pantelides is a distinguished inventor whose work in silicon carbide semiconductor technology has made a lasting impact. His innovative methods and collaborations continue to influence the field, paving the way for future advancements.