The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Mar. 26, 2001
Gilyong Chung, Tampa, FL (US);
Chin Che Tin, Auburn, AL (US);
John R. Williams, Opelika, AL (US);
Kyle Mcdonald, Nashville, TN (US);
Massimiliano Di Ventra, Blacksburg, VA (US);
Robert A. Weller, Brentwood, TN (US);
Sokrates T. Pantelides, Franklin, TN (US);
Leonard C. Feldman, Nashville, TN (US);
Gilyong Chung, Tampa, FL (US);
Chin Che Tin, Auburn, AL (US);
John R. Williams, Opelika, AL (US);
Kyle McDonald, Nashville, TN (US);
Massimiliano Di Ventra, Blacksburg, VA (US);
Robert A. Weller, Brentwood, TN (US);
Sokrates T. Pantelides, Franklin, TN (US);
Leonard C. Feldman, Nashville, TN (US);
Vanderbilt University, Nashville, TN (US);
Auburn University, Auburn, AL (US);
Abstract
A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.